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The interpretation of EBIC images using Monte Carlo simulations
Author(s) -
Joy David C.
Publication year - 1986
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1986.tb02780.x
Subject(s) - electron beam induced current , monte carlo method , characterization (materials science) , semiconductor , optics , electron , cathode ray , materials science , beam (structure) , scanning electron microscope , optoelectronics , physics , statistics , mathematics , quantum mechanics
summary Charge collection microscopy, usually known by the acronym EBIC (Electron Beam Induced Current) imaging, is a powerful technique for the observation and characterization of semiconductor materials and devices in the scanning electron microscope. Quantitative interpretation of EBIC images is often difficult because of the problem of accurately representing the electron‐beam interaction with the semiconductor. This paper uses a Monte Carlo technique to simulate the electron‐beam interaction, and it is shown that this permits simple analytical point‐source solutions to be generalized to fully represent the experimental situation of an extended, non‐uniform, carrier source. The model is demonstrated by application to EBIC imaging in the Schottky barrier geometry.