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Specimen preparation technique for high resolution transmission electron microscopy studies on model supported metal catalysts
Author(s) -
Jacobs J. W. M.,
Verhoeven J. F. C. M.
Publication year - 1986
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1986.tb02768.x
Subject(s) - materials science , transmission electron microscopy , crystallite , wafer , metal , monolayer , silicon , catalysis , membrane , resolution (logic) , chemical engineering , nanotechnology , optoelectronics , metallurgy , chemistry , engineering , biochemistry , artificial intelligence , computer science
SUMMARY A new technique is described which can be used for preparing transmission electron microscopy (TEM) specimens suitable for high resolution studies on supported metal catalysts. By conventional silicon processing techniques 200 × 200 μm 2 Si 3 N 4 membranes on Si wafers are produced. These membranes are extremely flat and have a uniform thickness of 13 nm. They can be used as a support in various kinds of thin film deposition. A TiO 2 film, optimally structured with respect to the requirements for high resolution TEM work in TiO 2 –metal cluster systems, is deposited on the Si 3 N 4 layer. It consists of one monolayer of 10–25 nm TiO 2 crystallites. TiO 2 lattice images show that a line resolution down to 0.19 nm is possible. Examples of TiO 2 –Pd and TiO 2 –Rh are given using respectively photodeposition and impregnation reduction to produce l.5–4 nm metal clusters.