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High resolution electron microscopy of grain boundaries in Nb 3 Ge‐films
Author(s) -
Nissen H.U.,
Kitano Y.,
Wessicken R.
Publication year - 1986
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1986.tb02754.x
Subject(s) - grain boundary , rotation (mathematics) , electron microscope , materials science , resolution (logic) , symmetry (geometry) , crystallography , electron micrographs , boundary (topology) , condensed matter physics , zone axis , geometry , electron diffraction , optics , chemistry , microstructure , physics , diffraction , mathematics , mathematical analysis , artificial intelligence , computer science
SUMMARY Nb 3 Ge‐films synthesized on Mo‐substrates by the co‐evaporation method show a characteristic fabric with a quasi‐twelvefold symmetry around the [001]‐axis of the A15‐type cubic structure. Among approximate +30°‐ and ±60°‐rotation boundaries, grain boundaries having rotation angles between 28° and 29° are observed most frequently in the Nb 3 Ge‐films. Using the high resolution electron micrographs, a Σ17‐boundary having an ideal rotation angle of 28.07° is analysed and plausible boundary models on the atomic level are proposed.