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Enhanced oxygen diffusion and precipitation in silicon
Author(s) -
Bergholz W.,
Hutchison J. L.,
Pirouz P.
Publication year - 1986
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1986.tb02711.x
Subject(s) - silicon , annealing (glass) , oxygen , materials science , nucleation , ribbon , precipitation , diffusion , crystallography , chemical physics , lattice (music) , condensed matter physics , chemistry , thermodynamics , physics , composite material , metallurgy , acoustics , organic chemistry , meteorology
SUMMARY Prolonged annealing of Cz‐silicon at 758 K results in the formation of ribbon‐like oxygen precipitates on {311} planes interpreted as the coesite phase. From this an enhancement of the oxygen diffusion coefficient by more than three orders of magnitude is inferred. Excess selfinterstitials are accommodated in extrinsic dislocation loops on {111} planes (‘loopites’) and probably also in ‘blob’‐like defects visible in high resolution micrographs with little detectable lattice strain. Evidence is presented that coesite ribbons can nucleate on {311} steps on loopites and vice versa.