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Some recent developments in low voltage E‐beam testing of ICs
Author(s) -
Menzel E.,
Buchanan R.
Publication year - 1985
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1985.tb02687.x
Subject(s) - analyser , resolution (logic) , lens (geology) , cathode ray , optics , materials science , scanning electron microscope , voltage , beam (structure) , acceleration voltage , electronic circuit , integrated circuit , image resolution , electron microscope , electron , optoelectronics , physics , computer science , electrical engineering , engineering , nuclear physics , artificial intelligence
SUMMARY The fundamental operating principles of electron beam testing of integrated circuits are reviewed. Data obtained using a recently developed secondary electron analyser located within the final probe‐forming lens in a scanning electron microscope are presented. Performance improvements in spatial resolution, energy resolution, and measurement accuracy are described.

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