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Very low voltage sputter coating
Author(s) -
Echlin Patrick,
Gee Wilf,
Chapman Brian
Publication year - 1985
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1985.tb02573.x
Subject(s) - sputtering , materials science , coating , cathode , thin film , sputter deposition , optoelectronics , nanotechnology , chemistry
SUMMARY Very low voltage sputter coating, in the range 175–300 V, has been used to produce finely structured thin films of noble and refractory metals for use in high resolution scanning electron microscopy. There is a marked diminution in the particle size with a decrease in cathode voltage. Although the sputtering times are longer than with conventional diode sputter coating, such times are shorter than those required to produce similar films by Penning or ion‐beam sputtering. The refractory metals produce films which are fine grained and suitable for high resolution studies. The method has been used to sputter coat thin layers of aluminium. All attempts at sputtering carbon have failed; the reasons for this are discussed in some detail.