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The high resolution electron microscopy of stacking defects in Cu–Zn–Al shape memory alloy
Author(s) -
Cook J. M.,
O'Keefe M. A.,
Smith David J.,
Stobbs W. M.
Publication year - 1983
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1983.tb04186.x
Subject(s) - stacking , shape memory alloy , electron microscope , alloy , resolution (logic) , martensite , materials science , contrast transfer function , phase (matter) , micrograph , electron transfer , crystallography , sequence (biology) , electron micrographs , optics , microstructure , scanning electron microscope , chemistry , nuclear magnetic resonance , physics , metallurgy , computer science , composite material , artificial intelligence , spherical aberration , biochemistry , organic chemistry , lens (geology)
Summary The characteristic defects in the martensitic phase of the memory alloy Cu–Zn–Al have been investigated using the Cambridge University 600 kV High Resolution Electron Microscope. Conditions are found under which the images can be quantitatively simulated when this involves the transfer of structural information at resolutions beyond the first zero of the contrast transfer function. Defects of sequence‐type were positively identified by the comparison of high‐resolution micrographs with full dynamical image simulations.