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Principles of TEM contrast simulations of inclined interfaces in homogeneous crystals
Author(s) -
Gratias D.,
Portier R.
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb04130.x
Subject(s) - homogeneous , scattering , formalism (music) , high contrast , rod , contrast (vision) , stacking , stacking fault , inversion (geology) , translation (biology) , optics , crystallography , materials science , physics , condensed matter physics , geometry , mathematics , statistical physics , chemistry , geology , nuclear magnetic resonance , alternative medicine , structural basin , pathology , visual arts , musical , paleontology , biochemistry , medicine , messenger rna , gene , art
SUMMARY The scattering matrix formalism used for the cases of translation and inversion boundaries is generalized to any type of interface in homogeneous crystals. The present method needs no arbitrary decompositions of the diffracting sets in the lower crystal. It leads to conditions of stacking‐fault‐like contrast, different from those proposed by Sutton & Pond, in agreement with experiments.