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The observation of amorphous materials at high voltage and high resolution
Author(s) -
Smith David J.,
Saxton W. O.,
Cleaver J. R. A.,
Catto C. J. D.
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb04072.x
Subject(s) - silicon , resolution (logic) , materials science , electron microscope , amorphous solid , high resolution , amorphous silicon , carbon fibers , acceleration voltage , germanium , microscope , optoelectronics , voltage , nanotechnology , optics , electron , chemistry , computer science , physics , electrical engineering , crystallography , crystalline silicon , composite material , engineering , remote sensing , cathode ray , geology , nuclear physics , artificial intelligence , composite number
SUMMARY Thin films of amorphous carbon, silicon and germanium have been examined at high resolution at accelerating voltages up to 575 kV with the Cambridge University high resolution electron microscope. The directly interpretable resolution has been demonstrated to extend to 0ṁ22 nm, so that the microscope is capable of providing unambiguous structural information at the atomic level. The observations of both carbon and silicon were, however, somewhat disappointing in that no significant specimen detail was revealed despite the improved performance compared with that of conventional 100 kV instruments. Some of the factors involved in observation and interpretation of these images are discussed.