Premium
SEM and TEM studies of defects in Si‐doped GaAs substrate material before and after Zn diffusion
Author(s) -
Darby D. B.,
Augustus P. D.,
Booker G. R.,
Stirland D. J.
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb00283.x
Subject(s) - diffusion , nucleation , materials science , doping , substrate (aquarium) , precipitation , analytical chemistry (journal) , crystallography , optoelectronics , chemistry , thermodynamics , geology , physics , oceanography , organic chemistry , chromatography , meteorology
SUMMARY Si‐doped GaAs slices after Zn diffusion exhibited a marked decrease in luminous efficiency and a large increase in p‐n junction depth when the initial carrier concentration due to the Si was > 3·5 times 10 24 m −3 . SEM studies using the CL and EBIC methods, and TEM examinations using plan‐view and cross‐section specimens, showed that these behaviours were associated with high densities of structural defects, interpreted as Zn precipitation. Reasons for these behaviours in terms of nucleation behaviour and diffusion mechanisms are suggested.