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SEM—EBIC studies of boron implanted silicon
Author(s) -
Ioannou D. E.,
Davidson S. M.
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb00282.x
Subject(s) - boron , silicon , schottky diode , materials science , annealing (glass) , optoelectronics , wafer , diode , diffusion , schottky barrier , radiation damage , radiation , chemistry , optics , composite material , physics , organic chemistry , thermodynamics
SUMMARY Known SEM‐EBIC techniques based on Schottky diode and p‐n junction charge collectors are modified or further developed in order to study the radiation damage and the minority carrier diffusion length and lifetime in boron implanted silicon, and their annealing behaviour.