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Electron beam depth profiling in semiconductors
Author(s) -
Possin G. E.,
Kirkpatrick C. G.
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb00275.x
Subject(s) - semiconductor , silicon , materials science , profiling (computer programming) , semiconductor device , cathode ray , optoelectronics , transistor , jfet , electron , field effect transistor , layer (electronics) , nanotechnology , physics , quantum mechanics , voltage , computer science , operating system
SUMMARY A technique for depth profiling of semiconductors is described based upon the measurement of induced junction currents as a function of beam energy. Using the known energy loss relation and electron hole pair generation rate it is possible to infer quantitative information about the semiconductor structures as a function of depth between ∼0·02 and ∼5 μm for silicon. Examples of the application of the technique to implanted and electron beam pulse annealed silicon and to a JFET transistor are described. Calculations of diffusion length limits, junction depths, poly‐silicon thickness, epitaxial layer thickness and surface recombination velocity are discussed.