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Characterization Of Grain Boundaries Observed In Polycrystalline Silicon For Solar Cell Applications
Author(s) -
Fontaine Chantal,
Rocher André
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb00252.x
Subject(s) - grain boundary , polycrystalline silicon , characterization (materials science) , crystallite , materials science , solar cell , silicon , crystallography , optoelectronics , nanotechnology , metallurgy , chemistry , microstructure , layer (electronics) , thin film transistor
SUMMARY This paper describes some preliminary results concerning the TEM observations of grain boundaries in polycrystalline silicon for solar cell applications. A graphical method of grain boundary characterization has been developed. All the grain boundaries studied have been found to be characterized by twin relationships.