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Extended Screw Dislocation Networks In Silicon
Author(s) -
Gwinner D.,
Packeiser G.,
Labusch R.
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb00249.x
Subject(s) - climb , dislocation , annealing (glass) , silicon , materials science , crystallography , hexagonal crystal system , slip (aerodynamics) , twist , condensed matter physics , partial dislocations , geometry , composite material , chemistry , physics , metallurgy , thermodynamics , mathematics
SUMMARY Twisting silicon single crystals around a <111>‐axis and subsequent annealing produces a high fraction of screw dislocations that are arranged in hexagonal networks as is shown by TEM investigations. A maximum fraction of screws is obtained with a twist angle of 24° mm −1 and an annealing time of 4 h at 1420 K. Using stereopairs, the spatial structure of the networks was investigated. The dislocation structure in as‐deformed samples is regarded as an initial state from which hexagonal networks can be formed during heating. A weak beam analysis reveals two types of intrinisic‐extrinsic node pairs, one of which is considered to be a possible intermediate stage of the formation processes. An explanation is given, taking dislocation cross‐slip and climb into consideration.