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Tem Of Dislocations Under High Stress In Germanium And Doped Silicon
Author(s) -
Alexander H.,
Eppenstein H.,
Gottschalk H.,
Wendler S.
Publication year - 1980
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1980.tb00241.x
Subject(s) - silicon , germanium , materials science , boron , doping , dislocation , stacking fault , crystallography , partial dislocations , stress (linguistics) , critical resolved shear stress , condensed matter physics , metallurgy , optoelectronics , composite material , chemistry , physics , viscosity , shear rate , linguistics , philosophy , organic chemistry
SUMMARY The stacking fault energies y of silicon (58 ± 6 mJ m −2 ) and germanium (75 ± 10 mJ m −2 ) were determined. Within the limits of accuracy γ was not found to change on doping with (13·8 mol m −3 (8 × 10 18 cm −3 ) boron, and 1·17 mol m −3 (7 × 10 17 cm −3 ) phosphorus). Freezing in dislocations under high shear stress reveals a different behaviour of screw dislocations: whereas these dislocations become wider in pure and p‐silicon, they become narrower in n‐silicon. From this we conclude the ratio of mobilities of the two 30° partials to be different in n‐ and p‐silicon. Other observations on frozen dislocations are mentioned.