Premium
Semiconductor material assessment by scanning electron microscopy *
Author(s) -
Davidson S. M.
Publication year - 1977
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1977.tb00032.x
Subject(s) - semiconductor , materials science , electron beam induced current , scanning electron microscope , cathodoluminescence , dislocation , diffusion , carrier lifetime , characterization (materials science) , luminescence , electron , optoelectronics , optics , nanotechnology , silicon , physics , composite material , quantum mechanics , thermodynamics
SUMMARY Considerable strides have been made in the application of the cathodoluminescent and beam‐induced current modes of operation of the scanning electron microscope to the high resolution characterization of semiconductor materials. These techniques can be used to measure parameters such as resistivity, carrier concentration, mobility, composition, diffusion length, minority carrier lifetime, luminescence efficiency, dislocation density and temperature from regions of semiconductors as small as one micron across. The theoretical and experimental factors which limit the range of values over which measurements are possible and the accuracy attainable are discussed in detail. Each technique is illustrated by recent experimental results.