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Two‐Shockley unfaulting of two‐ and three‐layer faulted defects
Author(s) -
Ronander E.,
Kritzinger S.
Publication year - 1976
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1976.tb01091.x
Subject(s) - partial dislocations , dislocation , transmission electron microscopy , layer (electronics) , materials science , stacking fault , condensed matter physics , stacking , crystallography , electron microscope , thin layer , fault (geology) , composite material , optics , nanotechnology , chemistry , physics , geology , nuclear magnetic resonance , seismology
SUMMARY The principles of butterfiy‐unfaulting of Frank dislocation loops, i.e. unfaulting by the simultaneous action of two Shockley partial dislocations (Swart & Kritzinger, 1974a), are applied to two‐layer faulted defects in thin foils of quenched aluminium to explain the structure and contrast behaviour of some dislocation configurations observed by transmission electron microscopy. Direct electron microscope evidence is presented for the butterfiy‐unfaulting of three‐layer faulted defects in the same specimens. Positive evidence is furnished that Shockley partial dislocations can be nucleated at sites in the stacking fault other than the hexagon corners of the defects.