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Application of high voltage electron microscopy to low‐temperature radiation damage studies in metals
Author(s) -
Urban K.
Publication year - 1973
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1973.tb03766.x
Subject(s) - irradiation , annealing (glass) , radiation damage , electron microscope , materials science , electron beam processing , microscopy , diffraction , analytical chemistry (journal) , optics , chemistry , metallurgy , nuclear physics , physics , chromatography
SUMMARY The paper briefly reviews the advantages of high voltage electron microscopy applied to low temperature radiation damage studies. Such studies may be performed inside the microscope provided a high resolution specimen cooling stage is available. The main features of a new type of cooling stage used in the experiments relevant to this paper are outlined. The applicability of the stage for post‐irradiation annealing experiments is emphasized. During electron irradiation to high doses at 8°K the formation of defect clusters was observed in nickel and copper. This is accompanied by pronounced changes in the diffraction pattern. Post‐irradiation annealing of samples irradiated at 8°K produces defect clusters which can be identified as dislocation loops.