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The effect of radio‐frequency sputter ion etching and ion‐beam etching on biological material: a scanning electron microscope study
Author(s) -
Hodges Gisele M.,
Muir Marjorie D.,
Sella C.,
Carteaud A. J. P.
Publication year - 1972
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1972.tb01047.x
Subject(s) - scanning electron microscope , argon , etching (microfabrication) , sputtering , materials science , electron beam induced deposition , ion , reactive ion etching , ion beam , isotropic etching , focused ion beam , optoelectronics , analytical chemistry (journal) , chemistry , nanotechnology , thin film , scanning transmission electron microscopy , composite material , organic chemistry , layer (electronics) , chromatography
SUMMARY Mammalian and avian cells have been examined in the scanning electron microscope either after prior radio‐frequency sputter ion etching with different ions (hydrogen, helium, argon, oxygen) or after argon ion bombardment in the SEM. Whilst the pattern of erosion is similar in the different specimens, the etching pattern varies with the different gases. It has not been possible to relate the etching patterns to characteristic subsurface structures.