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Passive‐Oxidation Kinetics of SiC Microparticles
Author(s) -
Das D.,
Farjas J.,
Roura P.
Publication year - 2004
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2004.tb07726.x
Subject(s) - kinetics , crystallite , materials science , atmospheric temperature range , activation energy , oxide , monocrystalline silicon , oxidation process , analytical chemistry (journal) , chemical engineering , thermodynamics , chemistry , silicon , metallurgy , physics , chromatography , quantum mechanics , engineering
We investigated the oxidation kinetics of SiC materials in the form of powders (average dimension 4 μm) in the temperature range 1100°–1500°C in dry air. The oxidation process was monitored through the relative mass gain in a thermobalance. As the specific surface area of the particles was measured, the recorded mass gain could be converted into the corresponding oxide thickness. The oxidation isotherms were fitted to a linear‐parabolic equation, and the parabolic rate constant was evaluated. Up to 1400°C, temperature dependence can be described by a single activation energy of 179 kJ/mol, which increases in the 1400°–1500°C temperature range. These results are compared with the oxidation behavior of sintered polycrystalline and monocrystalline SiC materials.