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Improvement in the Oxidation Resistance of Oxide‐Matrix Silicon Carbide‐Particulate Composites by Mullite Infiltration
Author(s) -
Tian Jintao,
Shobu Kazuhisa
Publication year - 2003
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2003.tb03561.x
Subject(s) - mullite , cristobalite , materials science , particulates , silicon carbide , composite material , oxide , infiltration (hvac) , composite number , carbide , slurry , metallurgy , ceramic , chemistry , quartz , organic chemistry
A SiC–∼50 vol% mullite‐particulate composite fabricated by melt infiltration was found to exhibit excellent oxidation resistance at temperatures >1500°C in air. Cristobalite was found on the surface of samples after 100 h oxidation at temperatures of 1515°, 1620°, and 1650°C. The oxidation rate constant at 1515°C was almost comparable to hot‐pressed bulk SiC, and at least 1 order of magnitude lower than the lowest value for the oxide‐matrix SiC‐particulate composites made by conventional processes, as reported in the literature and made by melt infiltration in the present study.