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Chemical Solution Deposition of Columnar‐Grained Metallic Lanthanum Nitrate Thin Films
Author(s) -
Cheng JianGong,
Gabl Reinhard,
Pitzer Dana,
Primig Robert,
Schreiter Matthias,
Wersing Wolfram
Publication year - 2003
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2003.tb03555.x
Subject(s) - lanio , equiaxed crystals , materials science , grain size , microstructure , layer (electronics) , composite material , electrical resistivity and conductivity , metallurgy , thin film , deposition (geology) , lanthanum , silicon , mineralogy , nanotechnology , inorganic chemistry , chemistry , optoelectronics , paleontology , sediment , biology , electrical engineering , engineering , dielectric , ferroelectricity
Columnar and (100)‐oriented LaNiO 3 thin films were prepared on silicon substrates by a chemical solution deposition (CSD) process using a 0.05 M solution. By reducing the individual layer thickness to 10 nm, columnar LaNiO 3 films with a lateral grain size of ∼120 nm were obtained. The success of this approach required restricting the individual layer thickness to a value below the grain size observed for equiaxed films. This change in microstructure resulted in an improvement in conductivity. The columnar LaNiO 3 film with a thickness of 300 nm showed a resistivity of 4.5 × 10 −5 Ω·cm, which is lower by one order of magnitude than that of fine‐grain equiaxed films that typically result from CSD methods.