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Enhanced Properties of Tin(IV) Oxide Based Materials by Field‐Activated Sintering
Author(s) -
Scarlat Oana,
Mihaiu Susana,
Aldica Gh.,
Zaharescu Maria,
Groza Joanna R.
Publication year - 2003
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2003.tb03393.x
Subject(s) - sintering , materials science , analytical chemistry (journal) , electrical resistivity and conductivity , relative density , thermoelectric effect , solid solution , seebeck coefficient , tin , metallurgy , composite material , thermal conductivity , chemistry , thermodynamics , physics , chromatography , electrical engineering , engineering
The densification of SnO 2 (0.9 mol)–Sb 2 O 3 (0.1 mol) solid solution without any additives was studied by conventional and field‐activated sintering technique (FAST). FAST sintering achieved a relative density value of 92.4% at 1163 K for 10 min versus 61.3% in conventional sintering at 1273 K for 3 h. An abnormal reduction of the IR transmittance and a semiconductor defect structure with only one donor level in the SnO 2 energy gap were noticed in the FAST‐sintered as compared with the conventionally sintered Sn 0.82 Sb 0.18 O 2 solid solution. A high charge carrier concentration (i.e., electronic conduction) was shown in the FAST‐sintered sample by conductivity measurements and the negative values of the Seebeck coefficient.