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Fabrication and Microstructure Characterization of Ti 3 SiC 2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique
Author(s) -
Zhang ZheFeng,
Sun Zheng Ming,
Hashimoto Hitoshi,
Abe Toshihiko
Publication year - 2003
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2003.tb03317.x
Subject(s) - materials science , sintering , microstructure , fabrication , hot isostatic pressing , metallurgy , titanium , powder mixture , atmospheric temperature range , powder metallurgy , medicine , alternative medicine , physics , pathology , meteorology
Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti 3 SiC 2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti 3 SiC 2 samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti 3 SiC 2 could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti 3 SiC 2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex‐grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high‐purity Ti 3 SiC 2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.