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Two‐Layer Crystallization of Amorphous YMnO 3 Thin Films on Si (100) Substrates
Author(s) -
Yoo Dong Chul,
Lee Jeong Yong,
Kim Ik Soo,
Kim Yong Tae
Publication year - 2003
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2003.tb03292.x
Subject(s) - materials science , crystallite , amorphous solid , crystallization , transmission electron microscopy , annealing (glass) , thin film , layer (electronics) , high resolution transmission electron microscopy , crystallography , composite material , nanotechnology , chemical engineering , metallurgy , chemistry , engineering
During a rapid thermal annealing process at 850°C in a N 2 ambient, an as‐deposited amorphous YMnO 3 thin film on Si (100) substrates was crystallized with two distinct layers. High‐resolution transmission electron microscopy showed a top layer of c ‐axis‐oriented YMnO 3 and a bottom layer of polycrystalline YMnO 3 in the 100‐nm‐thick YMnO 3 thin film. The abrupt change of the crystalline orientation from the c ‐axis‐preferred orientation to the random orientation is caused primarily by high stress induced by the c ‐axis‐oriented YMnO 3 layer. High‐resolution X‐ray diffraction showed that the c ‐axis‐oriented YMnO 3 /polycrystalline YMnO 3 structure effectively relieved the stress.