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Interactions in the Silicon Carbide–Polyacrylic Acid–Yttrium Ion System
Author(s) -
Hirata Yoshihiro,
Tabata Shuhei,
Ideue Jun
Publication year - 2003
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2003.tb03269.x
Subject(s) - polyacrylic acid , materials science , adsorption , ion , calcination , sintering , chemical engineering , silicon carbide , suspension (topology) , particle (ecology) , zeta potential , inorganic chemistry , composite material , chemistry , nanotechnology , polymer , nanoparticle , catalysis , organic chemistry , mathematics , oceanography , homotopy , pure mathematics , engineering , geology
Interactions in the SiC powder–polyacrylic acid (PAA, dispersant)–Y 3+ ion (sintering additive) system were investigated in the pH range from 2 to 6. The amount of Y 3+ ions adsorbed on SiC particles increased with an increase of pH because of the electrostatic attraction between the negatively charged SiC surface and Y 3+ ions. On the other hand, the amount of PAA adsorbed on SiC particles decreased with increasing pH because of the electrostatic repulsion between the negatively charged SiC surface and dissociated PAA. The addition of PAA to the SiC suspension with Y 3+ ions increased the amount of Y 3+ ions fixed to SiC particles through the strong interaction between Y 3+ ions and PAA adsorbed on SiC particles. The above‐described interactions in the SiC–PAA–Y 3+ ions system were closely related to the coagulation of SiC particles and the rheology of SiC suspensions. The coagulation of SiC particles through the adsorbed Y 3+ ions decreased the specific surface area of SiC powder after calcination in an argon atmosphere. The addition of PAA to the SiC suspensions with Y 3+ ions kept the SiC particles separate during calcination, i.e., the PAA addition contributed to enhancement of the driving force of sintering (no decrease of specific surface area) and to control of the amount of Y 3+ ions uniformly fixed to the SiC surface.