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Aluminum Nitride Prepared by Nitridation of Aluminum Oxide Precursors
Author(s) -
Kroke Edwin,
Loeffler Lars,
Lange Fred F.,
Riedel Ralf
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00595.x
Subject(s) - nitride , hydroxide , aluminium , oxide , aluminum oxide , ammonia , inorganic chemistry , materials science , chemistry , chemical engineering , nuclear chemistry , metallurgy , nanotechnology , layer (electronics) , organic chemistry , engineering
Aluminum nitride (AlN) powders were prepared from the oxide precursors aluminum nitrate, aluminum hydroxide, aluminum 2‐ethyl‐hexanoate, and aluminum isopropoxide (i.e., Al(NO 3 ) 3 , Al(OH) 3 , Al(OH)(O 2 CCH(C 2 H 5 )(C 4 H 9 )) 2 , and Al(OCH(CH 3 ) 2 ) 3 ). Pyrolyses were performed in flowing dry NH 3 and N 2 at 1000°–1500°C. For comparison, the nitride precursors aluminum dimethylamide (Al(N(CH 3 ) 2 ) 3 ) and aluminum trimethylamino alane (AlH 3 ·N(CH 3 ) 3 ) were exposed to the same nitridation conditions. Products were investigated using XRD, TEM, EDX, SEM, and elemental analysis. The results showed that nitridation was primarily controlled by the water:ammonia ratio in the atmosphere. Single‐phase AlN powders were obtained from all oxide precursors. Complete nitridation was not obtained using pure N 2 , even for the non‐oxide precursors.