Premium
High‐Strength Porous Silicon Carbide Ceramics by an Oxidation‐Bonding Technique
Author(s) -
She Jihong,
Yang JianFeng,
Kondo Naoki,
Ohji Tatsuki,
Kanzaki Shuzo,
Deng ZhenYan
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00542.x
Subject(s) - materials science , cristobalite , sintering , ceramic , silicon carbide , porosity , composite material , crystallization , flexural strength , amorphous solid , chemical engineering , chemistry , quartz , organic chemistry , engineering
Porous silicon carbide (SiC) ceramics were fabricated by an oxidation‐bonding process in which the powder compacts are heated in air so that SiC particles are bonded to each other by oxidation‐derived SiO 2 glass. Because of the crystallization of amorphous SiO 2 glass into cristobalite during sintering, the fracture strength of oxidation‐bonded SiC ceramics can be retained to a relatively high level at elevated temperatures. It has been shown that the mechanical strength is strongly affected by particle size. When 0.6 μm SiC powders were used, a high strength of 185 MPa was achieved at a porosity of ∼31%. Moreover, oxidation‐bonded SiC ceramics were observed to exhibit an excellent oxidation resistance.