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Effect of Silicon Substitution on the Sintering and Microstructure of Hydroxyapatite
Author(s) -
Gibson Iain R.,
Best Serena M.,
Bonfield William
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00527.x
Subject(s) - sintering , materials science , microstructure , silicon , scanning electron microscope , ceramic , grain growth , grain size , metallurgy , mineralogy , composite material , chemistry
The substitution of between 0 and 1.6 wt% silicon (Si‐HA) in hydroxyapatite (HA) inhibited densification at low temperatures (1000°–1150°C), with these effects being more significant as the level of silicon substitution was increased. For higher sintering temperatures (1200°–1300°C), the sintered densities of HA and Si‐HA compositions were comparable. Examination of the ceramic microstructures by scanning electron microscopy (SEM) showed that silicon substitution also inhibited grain growth at higher sintering temperatures (1200°–1300°C). The negative effect of silicon substitution on the sintering of HA at low temperatures (1000°–1150°C) was reflected in the hardness values of the ceramics. However, for higher sintering temperatures, e.g., 1300°C, where sintered densities were comparable, the hardness values of Si‐HA compositions were equal to or greater than that of HA, reflecting the smaller grain sizes observed for the former.