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Fatigue‐Free Lead Zirconate Titanate (Pb(Zr,Ti)O 3 )‐Based Capacitors Co‐modified by Lanthanum and Lithium for Nonvolatile Memories
Author(s) -
Shannigrahi Santiranjan R.,
Lee SunHwa,
Jang Hyun M.
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00417.x
Subject(s) - lead zirconate titanate , materials science , ferroelectricity , capacitor , coercivity , thin film , titanate , lanthanum , polarization (electrochemistry) , composite material , analytical chemistry (journal) , optoelectronics , dielectric , nanotechnology , ceramic , inorganic chemistry , electrical engineering , condensed matter physics , voltage , chemistry , physics , chromatography , engineering
Pb 0.98 (La 1− x Li x ) 0.02 (Zr 0.55 Ti 0.45 )O 3 (PLLZT with 0.1 ≤ x ≤ 0.7) thin films were sol‐gel‐grown on Pt(111)/Ti/SiO 2 /Si substrates, employing a thin lead zirconate titanate (PZT) template layer. Films annealed at >550°C showed a highly (111)‐oriented preferential growth. Typical values of the switchable remanent polarization (2 P r ) and the coercive field ( E c ) of the PLLZT/PZT/Pt film capacitor for x = 0.3 were 50 μC/cm 2 and 39 kV/cm, respectively, at 5 V. All the PLLZT/PZT/Pt capacitors (for 0.1 ≤ x ≤ 0.7) exhibited fatigue‐free behavior up to 6.5 × 10 10 switching cycles, a quite stable charge retention profile with time, and high 2 P r values, all which assure their suitability for nonvolatile ferroelectric memories.