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Oxidation of Silicon and Silicon Carbide in Ozone‐Containing Atmospheres at 973 K
Author(s) -
Narushima Takayuki,
Kato Michihisa,
Murase Shin,
Ouchi Chiaki,
Iguchi Yasutaka
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00402.x
Subject(s) - ozone , oxygen , silicon , silicon carbide , materials science , oxide , dissociation (chemistry) , wafer , analytical chemistry (journal) , water vapor , partial pressure , inorganic chemistry , chemistry , nanotechnology , environmental chemistry , metallurgy , organic chemistry
The oxidation behavior of a silicon wafer, chemically vapor‐deposited SiC, and single‐crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone‐containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone‐gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO 2 film apparently was the rate‐controlling process.