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Preparation of Aluminum Nitride–Silicon Carbide Nanocomposite Powder by the Nitridation of Aluminum Silicon Carbide
Author(s) -
Itatani Kiyoshi,
Tsukamoto Ryuji,
Delsing Anne C. A.,
Hintzen Hubertus T.,
Okada Isao
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00375.x
Subject(s) - materials science , nitriding , silicon carbide , nitride , aluminium , carbide , nanocomposite , silicon , metallurgy , chemical engineering , silicon nitride , composite material , layer (electronics) , engineering
Aluminum nitride (AlN)–silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum‐silicon carbide (Al 4 SiC 4 ) with the specific surface area of 15.5 m 2 ·g −1 . The powders nitrided at and above 1400°C for 3 h contained the 2H‐phases which consisted of AlN‐rich and SiC‐rich phases. The formation of homogeneous solid solution proceeded with increasing nitridation temperature from 1400° up to 1500°C. The specific surface area of the AlN–SiC powder nitrided at 1500°C for 3 h was 19.5 m 2 ·g −1 , whereas the primary particle size (assuming spherical particles) was estimated to be ∼100 nm.