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Low‐Voltage Varistor Based on (Sn,Ti)O 2 Ceramics
Author(s) -
Bueno Paulo R.,
CassiaSantos Maria R.,
Simões Luis G. P.,
Gomes José W.,
Longo Elson,
Varela José A.
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00084.x
Subject(s) - varistor , materials science , doping , capacitance , ceramic , schottky diode , voltage , analytical chemistry (journal) , electrical engineering , metallurgy , electrode , optoelectronics , chemistry , diode , chromatography , engineering
A description is given of the nonohmic behavior obtained in (Sn x Ti 1− x )O 2 ‐based systems. A matrix founded on (Sn x Ti 1− x )O 2 ‐based systems doped with Nb 2 O 5 leads to a low‐voltage varistor system with nonlinear coefficient values of ∼9. The presence of the back‐to‐back Schottky‐type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (Sn x Ti 1− x )O 2 ‐based system presents higher nonlinear coefficient values (>30) than does the SnO 2 ‐based varistor system.