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Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl 3
Author(s) -
Lee Soo Min,
Kim Young Hoon,
Chung Su Jin
Publication year - 2002
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2002.tb00035.x
Subject(s) - buffer (optical fiber) , layer (electronics) , hydride , materials science , epitaxy , photoluminescence , deposition (geology) , chemical vapor deposition , vapor phase , analytical chemistry (journal) , phase (matter) , optoelectronics , chemistry , metallurgy , composite material , metal , chromatography , telecommunications , paleontology , physics , organic chemistry , sediment , computer science , biology , thermodynamics
GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl 3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X‐ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al 2 O 3 were single‐crystalline. Band‐edge emission dominated photoluminescence was observed at room temperature.