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Scavenging of Siliceous Grain‐Boundary Phase of 8‐mol%‐Ytterbia‐Stabilized Zirconia without Additive
Author(s) -
Lee JongHeun,
Mori Toshiyuki,
Li JiGuang,
Ikegami Takayasu,
Drennan John,
Kim DohYeon
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb01086.x
Subject(s) - sintering , scavenging , grain size , cubic zirconia , materials science , grain boundary , phase (matter) , conductivity , thermal conduction , mineralogy , analytical chemistry (journal) , composite material , chemistry , microstructure , ceramic , chromatography , organic chemistry , antioxidant , biochemistry
The grain‐boundary conductivity (ς gb ) of 8‐mol%‐ytterbia‐stabilized zirconia increased markedly with heat treatment between 1000° and 1300°C with a slow heating rate (0.1°C/min) before sintering. The extent of the ς gb improvement was the same or larger than that via Al 2 O 3 addition. The heat treatment did not affect the grain‐interior conduction when sintered at 1600°C, while Al 2 O 3 ‐derived scavenging significantly did, given the larger increment of total conductivity in the heat‐treated sample. The formation of a silicon‐containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and ς gb .