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Fabrication of Lanthanum Manganese Oxide Thin Films on Yttria‐Stabilized Zirconia Substrates by a Chemically Modified Alkoxide Method
Author(s) -
Hwang Hae Jin,
Towata Atsuya,
Awano Masanobu
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb01009.x
Subject(s) - alkoxide , materials science , perovskite (structure) , lanthanum , lanthanum manganite , thin film , cubic zirconia , sol gel , chemical engineering , crystallization , inorganic chemistry , yttria stabilized zirconia , nanocrystalline material , ceramic , chemistry , composite material , nanotechnology , catalysis , organic chemistry , electrode , engineering , electrolyte
Perovskite‐type thin films of lanthanum manganese oxide (LaMnO 3 ) were prepared on yttria (8%) stabilized zirconia substrate by the sol–gel process from an alkoxide solution of lanthanum isopropoxide (La(O‐ i ‐C 3 H 7 ) 3 ) and manganese isopropoxide (Mn(O‐ i ‐C 3 H 7 ) 2 ). The alkoxide solution was chelated with 2‐ethyacetoacetate, and further modified with polyethylene glycol (PEG). The obtained LaMnO 3 thin film was transparent and macroscopically crackless. X‐ray diffraction, differential thermal analysis–thermogravimetry analysis, and scanning electron microscope observations indicated that single‐phase LaMnO 3 thin films with a grain size of 80 to 100 nm are formed when a spin‐coated LaMnO 3 gelled film is heated at 600°C for 1 h. The porous and homogeneous grain structure with a grain size of <100 nm can be obtained when the LaMnO 3 gelled film is heated at 600° and 800°C. It was considered that PEG might accelerate the crystallization of the perovskite phase, which indicates that PEG assists the formation of the La‐O‐Mn frame network during partial hydrolysis and condensation reactions in sol–gel processes.