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Nanoscale Densification Creep in Polymer‐Derived Silicon Carbonitrides at 1350°C
Author(s) -
Shah Sandeep R.,
Raj Rishi
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb00989.x
Subject(s) - materials science , creep , composite material , nanoscopic scale , amorphous solid , polymer , stress (linguistics) , deformation (meteorology) , silicon , shear stress , compression (physics) , shear (geology) , volume (thermodynamics) , strain rate , thermodynamics , crystallography , nanotechnology , metallurgy , chemistry , linguistics , philosophy , physics
The measurement of axial and radial strains during uniaxial compression creep of SiCN shows the deformation to be entirely volumetric (as opposed to shear). Phenomenologically, the densification strain rate shows a good fit to an exponential stress dependence. This result is explained by the large volume of the diffusing molecular units in the oligomeric amorphous structure of SiCN, which causes the driving force to become nonlinear in stress. The size of the diffusing unit is estimated to be 1.2 nm.