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Precursor‐Derived Si‐B‐C‐N Ceramics: Oxidation Kinetics
Author(s) -
Butchereit Elke,
Nickel Klaus G.,
Müller Anita
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb00985.x
Subject(s) - ceramic , kinetics , materials science , analytical chemistry (journal) , mineralogy , chemistry , metallurgy , physics , organic chemistry , quantum mechanics
The oxidation behavior of three precursor‐derived ceramics—Si 4.46 BC 7.32 N 4.40 (AMF2p), Si 2.72 BC 4.51 N 2.69 (AMF3p), and Si 3.08 BC 4.39 N 2.28 (T2/1p)—was investigated at 1300° and 1500°C. Scale growth at 1500°C in air can be approximated by a parabolic rate law with rate constants of 0.0599 and 0.0593 μm 2 /h for AMF3p and T2/1p, respectively. The third material does not oxidize according to a parabolic rate law, but has a similar scale thickness after 100 h. The results show that at least within the experimental times these ceramics develop extremely thin scales, thinner than pure SiC or Si 3 N 4 .