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Heat‐Resistant Silicon Carbide with Aluminum Nitride and Erbium Oxide
Author(s) -
Kim YoungWook,
Mitomo Mamoru,
Nishimura Toshiyuki
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb00958.x
Subject(s) - silicon carbide , materials science , nitride , carbide , erbium , silicon nitride , aluminium , metallurgy , aluminum oxide , oxide , silicon , engineering physics , optoelectronics , composite material , doping , layer (electronics) , engineering
Fully dense SiC ceramics with high strength at high temperature were obtained by hot‐pressing and subsequent annealing under pressure, with AlN and Er 2 O 3 as sintering additives. The ceramics had a self‐reinforced microstructure consisting of elongated SiC grains and a grain‐boundary glassy phase. The strength of these ceramics was ∼550 MPa at 1600°C, and the fracture toughness was ∼6 MPa·m 1/2 at room temperature. The beneficial effect of the new additive composition on high‐temperature strength might be attributable to the introduction of aluminum from the liquid composition into the SiC lattice, resulting in a refractive grain‐boundary glassy phase.