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Flexural Creep of an in Situ ‐Toughened Silicon Carbide
Author(s) -
Sixta Mark E.,
Feng Zhang Xiao,
Jonghe Lutgard C.
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb00952.x
Subject(s) - materials science , creep , flexural strength , grain boundary , composite material , microstructure , ceramic , silicon carbide , intergranular corrosion , dislocation , cavitation , physics , mechanics
Flexural creep behavior is reported for an in situ ‐toughened SiC between 1100° and 1500°C in four‐point bending. The flexural creep rate of this SiC, sintered with aluminum, boron, and carbon (ABC‐SiC), exhibits linear stress dependence, low apparent activation energy, and low incidence of cavitation and dislocation production. Most grain boundaries in this ceramic contain 1–5 nm intergranular films. The creep rate is consistent with a grain‐boundary transport mechanism involving diffusion along the grain‐boundary film‐SiC interfaces. The microstructure and grain boundaries have been examined using transmission electron microscopy to assess possible changes during creep, particularly in relation to the applied stress direction.