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Synthesis of Low‐Dielectric Silica Aerogel Films by Ambient Drying
Author(s) -
Kim Gun S.,
Hyun Sang H.,
Park Hyung H.
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb00677.x
Subject(s) - aerogel , dielectric , materials science , porosity , low k dielectric , chemical engineering , heptane , composite material , chemistry , organic chemistry , optoelectronics , engineering
A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low‐ k SiO 2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO 2 aerogel films having a thickness of 9500 Å, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n ‐heptane as a drying solvent.