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Fabrication of Carbon/Silicon Carbide Composites by Isothermal Chemical Vapor Infiltration, Using the In Situ Whisker‐Growing and Matrix‐Filling Process
Author(s) -
Oh Byung Jun,
Lee Young Jin,
Choi Doo Jin,
Hong Gye Won,
Park Ji Yeon,
Kim Won Ju
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb00643.x
Subject(s) - whisker , chemical vapor infiltration , whiskers , materials science , composite material , silicon carbide , isothermal process , fabrication , porosity , in situ , monocrystalline whisker , chemistry , organic chemistry , medicine , physics , alternative medicine , pathology , thermodynamics
C/SiC composites were prepared via isothermal chemical vapor infiltration (ICVI). A novel process of in situ whisker growing and matrix filling during ICVI was devised to reduce the porosity of the C/SiC composites, by alternating the dilute‐gas species. C/SiC composites with increased density were prepared successfully using this novel process, in comparison with those obtained from the conventional ICVI process. The whiskers seem to have grown into the large pores and modified the pore structure that is filled by the SiC matrix.