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Effect of the Pb/Ti Source Ratio on the Crystallization of PbTiO 3 Thin Films Grown by Metalorganic Chemical Vapor Deposition at Low Temperature of 400 o C
Author(s) -
Wang Chae Hyun,
Choi Doo Jin
Publication year - 2001
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2001.tb00632.x
Subject(s) - chemical vapor deposition , raman spectroscopy , thin film , auger electron spectroscopy , crystallization , materials science , amorphous solid , analytical chemistry (journal) , metalorganic vapour phase epitaxy , crystallite , scanning electron microscope , substrate (aquarium) , mineralogy , epitaxy , crystallography , chemistry , nanotechnology , layer (electronics) , metallurgy , optics , physics , oceanography , organic chemistry , chromatography , geology , nuclear physics , composite material
Crystalline PbTiO 3 thin films were successfully deposited on (111)‐oriented Pt/Ti/SiO 2 /Si and on (200)‐oriented Pt/SiO 2 /Si by metalorganic chemical vapor deposition at a substrate temperature of 400°C, using a β‐diketonate complex of Pb(tmhd) 2 (tmhd = 2,2,6,6‐tetramethyl‐3,5‐heptanedionate) and titanium isopropoxide as source precursors. The dependence of the formation of crystalline PbTiO 3 phase on the Pb/Ti input precursor ratio is qualitatively described. The structure of the films deposited at 400°C changed from amorphous to polycrystalline with an increase of the Pb/Ti ratio from 1.1 to 5.0, including a partially crystallized structure at some intermediate ratio. Partial crystallization of as‐grown PbTiO 3 film was analyzed by scanning electron microscopy, micro‐Raman, and Auger electron spectroscopy measurements. It was found that the control of excess Pb precursor through a change in the Pb/Ti ratio is the key process parameter for the formation of crystalline PbTiO 3 phase in the low‐temperature MOCVD process.