Premium
Effect of Atmosphere on Weight Loss in Sintered Silicon Carbide during Heat Treatment
Author(s) -
Nagano Takayuki,
Kaneko Kenji,
Zhan GuoDong,
Mitomo Mamoru
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01631.x
Subject(s) - sintering , materials science , argon , silicon carbide , nitrogen , grain boundary , carbide , weight loss , atmosphere (unit) , atmospheric temperature range , nitrogen gas , argon gas , phase (matter) , metallurgy , microstructure , chemistry , thermodynamics , physics , organic chemistry , medicine , obesity
Heat treatment was performed on β‐SiC with different sintering additives in the temperature range 1873–2073 K, in both argon and nitrogen‐gas atmospheres. In the case of the specimens heat‐treated at 2073 K in argon, the weight loss was more than the total weight of the sintering additives, except for B,C‐doped β‐SiC. On the other hand, weight loss was suppressed by about one‐third to one‐half in nitrogen gas. Weight loss depended mainly on the reaction at the interface between the SiC grains and the grain‐boundary phase.