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Electrical Properties of a Bismuth Layer‐Structured Ba 2 Bi 4 Ti 5 O 18 Single Crystal
Author(s) -
Irie Hiroshi,
Miyayama Masaru,
Kudo Tetsuichi
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01619.x
Subject(s) - ferroelectricity , materials science , coercivity , bismuth , anisotropy , dielectric , permittivity , condensed matter physics , single crystal , curie temperature , electrical resistivity and conductivity , uniaxial crystal , polarization (electrochemistry) , conductivity , analytical chemistry (journal) , mineralogy , nuclear magnetic resonance , crystallography , optics , chemistry , ferromagnetism , optoelectronics , physics , optical axis , quantum mechanics , lens (geology) , metallurgy , chromatography
Ba 2 Bi 4 Ti 5 O 18 single crystals were grown, and their dielectric permittivity, conductivity, and ferroelectricity were investigated along the a ‐(or b ‐)axis and the c ‐axis separately. The dielectric permittivity at 1 MHz along the a ‐(or b ‐)axis was 2000 at the Curie temperature (360°C); this value was 8 times greater than that along the c ‐axis. The dc conductivity was greater along the a ‐(or b ‐)axis than that along the c ‐axis, by one order of magnitude. In regard to the ferroelectricity, the saturated remanent polarization was 120 mC/m 2 and the saturated coercive field was 3 MV/m along the a ‐(or b ‐)axis; values of 8.5 mC/m 2 and 0.81 MV/m, respectively, were observed along the c ‐axis. The Ba 2 Bi 4 Ti 5 O 18 single crystals had large electrical anisotropies, which were due to the layered structure.