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Morphology and Stacking Faults of β‐Silicon Carbide Whisker Synthesized by Carbothermal Reduction
Author(s) -
Seo WonSeon,
Koumoto Kunihito,
Aria Shigeo
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01593.x
Subject(s) - whiskers , whisker , stacking , silicon carbide , materials science , carbothermic reaction , stacking fault , composite material , monocrystalline whisker , cleavage (geology) , carbide , crystallography , chemistry , fracture (geology) , organic chemistry , dislocation
The main formation reaction for whisker that has been synthesized from SiO 2 and carbon black (CB) in a hydrogen‐gas atmosphere was a solid–gas reaction between SiO and CB. The synthesized whiskers were classified into three types, in terms of the morphology, growth direction, and stacking‐fault planes: (i) type A, which has a relatively flat surface and the stacking‐fault planes are perpendicular to the growth direction; (ii) type B, which has a rough surface and the stacking‐fault planes are inclined at an angle of 35° to the growth direction; and (iii) type C, which has a rough sawtooth surface and the stacking faults exist concurrently in three different {111} planes. The observed angles in the deflected and branched whiskers were 125°, 70°, and 109°. These whiskers were composed of mixtures of type A and type B, type A only, or parallel growth by two pairs of type A and type B whiskers. The whisker deflection was closely related to the difference in the growth speed of each type of whisker.