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Effect of Glass Composition on the Electrical Properties of Thick‐Film Resistors
Author(s) -
Adachi Kenji,
Kuno Hiroko
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01574.x
Subject(s) - borosilicate glass , materials science , electrical resistivity and conductivity , ion , resistor , mineralogy , composite material , chemistry , organic chemistry , voltage , electrical engineering , engineering , physics , quantum mechanics
Ruthenium‐based thick‐film resistors (TFRs) with lead borosilicate glasses of various compositions have been examined for their electrical properties. A striking increase in resistivity has been observed with lead‐depleted glasses, and analysis of this increase reveals that it is derived from the critical loss of Ru ions/clusters in the glass. With high‐lead‐content glasses, the resistivity decreases by two orders of magnitude, in conjunction with the structural inclination of glass toward PbO·SiO 2 , 2PbO·SiO 2 , and 4PbO·B 2 O 3 , which are believed to accommodate more Ru ions/clusters. These behaviors substantiate the role of Ru ions/clusters in glass as an indispensable entity for electrical conduction in TFRs.