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Thermal Conductivity of β‐Si 3 N 4 : II, Effect of Lattice Oxygen
Author(s) -
Kitayama Mikito,
Hirao Kiyoshi,
Tsuge Akira,
Watari Koji,
Toriyama Motohiro,
Kanzaki Shuzo
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01501.x
Subject(s) - oxygen , annealing (glass) , materials science , grain size , microstructure , thermal conductivity , electrical resistivity and conductivity , grain boundary , lattice (music) , analytical chemistry (journal) , crystal structure , conductivity , mineralogy , metallurgy , crystallography , chemistry , composite material , chromatography , acoustics , electrical engineering , engineering , physics , organic chemistry
Dense β‐Si 3 N 4 with various Y 2 O 3 /SiO 2 additive ratios were fabricated by hot pressing and subsequent annealing. The thermal conductivity of the sintered bodies increased as the Y 2 O 3 /SiO 2 ratio increased. The oxygen contents in the β‐Si 3 N 4 crystal lattice of these samples were determined using hot‐gas extraction and electron spin resonance techniques. A good correlation between the lattice oxygen content and the thermal resistivity was observed. The relationship between the microstructure, grain‐boundary phase, lattice oxygen content, and thermal conductivity of β‐Si 3 N 4 that was sintered at various Y 2 O 3 /SiO 2 additive ratios has been clarified.