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Current–Voltage Characteristics of Σ1 Boundaries with and without Cobalt Ions in Niobium‐Doped SrTiO 3 Bicrystals
Author(s) -
Yamamoto Takahisa,
Hayashi Katsuro,
Ikuhara Yuichi,
Sakuma Taketo
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01423.x
Subject(s) - cobalt , grain boundary , materials science , niobium , doping , ion , transmission electron microscopy , condensed matter physics , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , metallurgy , optoelectronics , microstructure , physics , organic chemistry , chromatography
Current–voltage ( I – V ) characteristics across Σ1 boundaries of Nb‐doped SrTiO 3 bicrystals were investigated with a special interest in the effect of an impurity ion, cobalt. The Σ1 boundary with cobalt ions was fabricated by hot‐joining technique after evaporating metallic cobalt onto the (001) plane used for a contact plane. High‐resolution transmission electron microscopy (HREM) study associated with X‐ray energy dispersive spectroscopy (EDS) revealed that cobalt solved and distributed around the Σ1 boundary which was perfectly joined without any second films. It was found that the Σ1 boundary with cobalt ions exhibited a nonlinear I – V relationship while the Σ1 boundary without cobalt ions showed a linear I – V relationship. This result indicates that the presence of cobalt itself at the boundary can form a potential barrier irrespective of grain boundary coherency.