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Equilibrium Point Defect and Electronic Carrier Distributions near Interfaces in Acceptor‐Doped Strontium Titanate
Author(s) -
McIntyre Paul C.
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01343.x
Subject(s) - strontium titanate , acceptor , grain boundary , materials science , crystallographic defect , doping , annealing (glass) , vacancy defect , conductivity , condensed matter physics , ceramic , mineralogy , chemistry , thin film , nanotechnology , composite material , microstructure , optoelectronics , physics
A mathematical model based on Frenkel's theory for charged defect segregation at interfaces is used to calculate the equilibrium grain boundary depletion layer widths and conductivity profiles in acceptor‐doped SrTiO 3 ceramics. The calculations examine the effect of oxygen vacancy equilibration during annealing at moderate temperatures (∼1000 K) on the development of interfacial charge that influences grain boundary electrical properties at lower temperatures. Good agreement is demonstrated between the model predictions and experimental results reported in the literature.